Analysis of substrate deep-trap effects on the turn-on characteristics in GaAs MESFETs

Author

Horio, K. ; Wakabayashi, A. ; Otsuka, S. ; Yamada, T.

Author_Institution

Fac. of Syst. Eng., Shibaura Inst. of Technol., Tokyo, Japan

fYear

1998

fDate

1998

Firstpage

327

Lastpage

330

Abstract

Two-dimensional analysis of the turn-on characteristics of GaAs MESFETs is made in which deep donors “EL2” in the semi-insulating substrate and surface states are considered. It is found that abnormal current overshoot due to EL2 can be seen when the off-state gate voltage is deeply negative. This is because in such a case electrons are depleted also in the semi-insulating substrate in the OFF state, and the corresponding ionized EL2 density N_EL2⁺ around the channel-substrate interface can be much higher than in the ON state

Keywords

III-V semiconductors; Schottky gate field effect transistors; deep levels; electron traps; gallium arsenide; hole traps; impurity states; semiconductor device models; substrates; surface states; GaAs; GaAs MESFETs; abnormal current overshoot; channel-substrate interface; deep donors; ionized EL2 density; off-state gate voltage; semi-insulating substrate; substrate deep-trap effects; surface states; turn-on characteristics; two-dimensional analysis; Charge carrier processes; Electrons; Energy states; Gallium arsenide; Insulation; MESFETs; Modeling; Poisson equations; Systems engineering and theory; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconducting and Insulating Materials, 1998. (SIMC-X) Proceedings of the 10th Conference on

Conference_Location

Berkeley, CA

Print_ISBN

0-7803-4354-9

Type

conf

DOI

10.1109/SIM.1998.785136

Filename

785136