Investigation of noise in silicon nanowire transistors through quantum simulations

A theoretical analysis of the drain current and its fluctuation in silicon nanowire transistors is proposed. We also suggest a general approach to the electronic noise calculation in the presence of a continuous distribution of phase-breaking scattering. Through our approach, the drain current noise characteristics with and without electron-phonon interactions are obtained at various bias conditions, and their physical origins are investigated. The non-equilibrium Greenpsilas function formalism is employed within the effective-mass and Hartree approximations. In addition, the intravalley and intervalley electron-phonon scattering mechanisms are included using the deformation potential theory and the self-consistent Born approximation.