Room-temperature continuous-wave operation of all-AlGaAs visible (/spl sim/700 nm) vertical-cavity surface emitting lasers fabricated by selective oxidation

Author

Hou, H.Q. ; Crawford, M. Hagerott ; Hickman, R.J. ; Hammons, B.E.

Author_Institution

Sandia Nat. Labs., Albuquerque, NM, USA

Volume

1

fYear

1996

fDate

18-21 Nov. 1996

Firstpage

386

Abstract

In summary, we have observed CW room temperature operation of 705.5 nm all-AlGaAs DBR QW VCSELs fabricated by selective oxidation. These devices, fabricated entirely with AlGaAs alloys, present an alternative material system for visible VCSELs.

Keywords

III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; gallium arsenide; laser cavity resonators; laser transitions; optical fabrication; oxidation; semiconductor laser arrays; surface emitting lasers; 705.5 nm; AlGaAs; AlGaAs DBR QW VCSELs; AlGaAs alloys; CW room temperature operation; laser diode fabrication; room-temperature continuous-wave operation; selective oxidation; visible 700 nm vertical-cavity surface emitting lasers; Chemical lasers; Distributed Bragg reflectors; Epitaxial growth; Fiber lasers; Optical surface waves; Oxidation; Quantum well lasers; Surface emitting lasers; Temperature; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1996. LEOS 96., IEEE

Conference_Location

Boston, MA, USA

Print_ISBN

0-7803-3160-5

Type

conf

DOI

10.1109/LEOS.1996.565295

Filename

565295