Title :
Wet oxidation of AlGaAs vs. AlAs: A little gallium is good
Author :
Choquette, Kent D. ; Geib, K.M. ; Hull, Robert ; Hou, H.Q. ; Lear, K.L. ; Chui, H.C. ; Hammons, B.E. ; Nevers, J.A.
Author_Institution :
Dept. of Photonics Res., Sandia Nat. Labs., Albuquerque, NM, USA
Abstract :
In summary, buried oxides formed from the wet oxidation of AlGaAs alloys, rather than AlAs, are found to be superior in terms of oxidation isotropy, mechanical stability, and strain. It is not surprising that VCSELs using AlGaAs oxide layers as current apertures have shown promising reliability as compared to VCSELs using AlAs layers. Comparisons of lifetime data for VCSELs with differing oxide layers will be presented. The beneficial properties of oxides converted from AlGaAs alloys are found to provide robust device processing of reliable VCSELs and may play an important role in other advanced optoelectronic devices.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; laser cavity resonators; optical fabrication; oxidation; semiconductor lasers; surface emitting lasers; AlAs; AlGaAs; advanced optoelectronic devices; buried oxides; current apertures; lifetime data; mechanical stability; oxidation isotropy; oxide layers; reliability; reliable VCSELs; robust device processing; strain; wet oxidation; Apertures; Capacitive sensors; Laser theory; Optical surface waves; Optical waveguides; Oxidation; Stability; Surface emitting lasers; Vertical cavity surface emitting lasers; Waveguide lasers;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1996. LEOS 96., IEEE
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-3160-5
DOI :
10.1109/LEOS.1996.565297
