Wet oxidation of AlGaAs vs. AlAs: A little gallium is good

Author

Choquette, Kent D. ; Geib, K.M. ; Hull, Robert ; Hou, H.Q. ; Lear, K.L. ; Chui, H.C. ; Hammons, B.E. ; Nevers, J.A.

Author_Institution

Dept. of Photonics Res., Sandia Nat. Labs., Albuquerque, NM, USA

Volume

1

fYear

1996

fDate

18-21 Nov. 1996

Firstpage

390

Abstract

In summary, buried oxides formed from the wet oxidation of AlGaAs alloys, rather than AlAs, are found to be superior in terms of oxidation isotropy, mechanical stability, and strain. It is not surprising that VCSELs using AlGaAs oxide layers as current apertures have shown promising reliability as compared to VCSELs using AlAs layers. Comparisons of lifetime data for VCSELs with differing oxide layers will be presented. The beneficial properties of oxides converted from AlGaAs alloys are found to provide robust device processing of reliable VCSELs and may play an important role in other advanced optoelectronic devices.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; laser cavity resonators; optical fabrication; oxidation; semiconductor lasers; surface emitting lasers; AlAs; AlGaAs; advanced optoelectronic devices; buried oxides; current apertures; lifetime data; mechanical stability; oxidation isotropy; oxide layers; reliability; reliable VCSELs; robust device processing; strain; wet oxidation; Apertures; Capacitive sensors; Laser theory; Optical surface waves; Optical waveguides; Oxidation; Stability; Surface emitting lasers; Vertical cavity surface emitting lasers; Waveguide lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1996. LEOS 96., IEEE

Conference_Location

Boston, MA, USA

Print_ISBN

0-7803-3160-5

Type

conf

DOI

10.1109/LEOS.1996.565297

Filename

565297