Performance evaluation of uniaxial- and biaxial-strained In(x)Ga(1−x)As NMOS DGFETs

For the first time, the performance of uniaxial- and biaxial- strained In_xGa_1-xAs NMOS double gate FETs (DGFET) with (111) and (001) orientations are thoroughly investigated under ballistic transport, taking into account non-parabolic full band structure, quantum effects, band-to-band tunneling (BTBT) and short-channel effects (SCE). The real and complex band structures for different composition, uniaxial and biaxial (tensile and compressive) strain are calculated using the local empirical pseudo-potential method (LEPM). In this paper, by varying strain conditions and orientations for the different materials, the best performing strained In_xGa_1-xAs materials are identified.