Title :
Performance evaluation of uniaxial- and biaxial-strained In(x)Ga(1−x)As NMOS DGFETs
Author :
Donghyun Kim ; Krishnamohan, T. ; Saraswat, Krishna C.
Author_Institution :
Dept. of Electr. Eng., Stanford Univ., Stanford, CA
Abstract :
For the first time, the performance of uniaxial- and biaxial- strained InxGa1-xAs NMOS double gate FETs (DGFET) with (111) and (001) orientations are thoroughly investigated under ballistic transport, taking into account non-parabolic full band structure, quantum effects, band-to-band tunneling (BTBT) and short-channel effects (SCE). The real and complex band structures for different composition, uniaxial and biaxial (tensile and compressive) strain are calculated using the local empirical pseudo-potential method (LEPM). In this paper, by varying strain conditions and orientations for the different materials, the best performing strained InxGa1-xAs materials are identified.
Keywords :
III-V semiconductors; MOSFET; ballistic transport; gallium arsenide; gallium compounds; indium compounds; tunnelling; InGaAs; NMOS DGFET; NMOS double gate FET; ballistic transport; band-to-band tunneling; biaxial strain; local empirical pseudopotential method; nonparabolic full band structure; quantum effects; short-channel effects; uniaxial strain; Ballistic transport; Capacitive sensors; Double-gate FETs; Effective mass; III-V semiconductor materials; Leakage current; MOS devices; Potential well; Tunneling; Uniaxial strain; Band-to-Band Tunneling; Biaxial strain; InGaAs; NMOS Double gate FETs; Quantum Ballistic Transport; Uniaxial strain; drive current; leakage current;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2008. SISPAD 2008. International Conference on
Conference_Location :
Hakone
Print_ISBN :
978-1-4244-1753-7
DOI :
10.1109/SISPAD.2008.4648247
