DocumentCode
3053461
Title
Transport masses in strained silicon MOSFETs with different channel orientations
Author
Rideau, D. ; Feraille, M. ; Michaillat, M. ; Tavernier, C. ; Jaouen, H.
Author_Institution
STMicroelectronics, Crolles
fYear
2008
fDate
9-11 Sept. 2008
Firstpage
105
Lastpage
108
Abstract
The confined states in [001]-oriented strained silicon layers embedded in oxide are investigated using dasiafull-zonepsila k.p analysis within the envelop function approximation and Tight-Binding (TB) model. Calculations of important transport parameters - energy band shifts and transport masses - show new results, rising the issues of the limit of simple models like the Effective Mass Approximation (EMA).
Keywords
MOSFET; effective mass; elemental semiconductors; silicon; silicon-on-insulator; tight-binding calculations; [001]-oriented strained silicon layers; channel orientations; confined states; effective mass approximation; energy band shifts; envelop function approximation; full-zone k.p analysis; silicon-on-insulator MOSFET; tight-binding model; transport masses; Approximation algorithms; Dispersion; Effective mass; Electrons; Equations; Function approximation; MOSFETs; Power engineering and energy; Silicon; Stress;
fLanguage
English
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices, 2008. SISPAD 2008. International Conference on
Conference_Location
Hakone
Print_ISBN
978-1-4244-1753-7
Type
conf
DOI
10.1109/SISPAD.2008.4648248
Filename
4648248
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