• DocumentCode
    3053569
  • Title

    An analytical 2D current model of Double-Gate Schottky-Barrier MOSFETs

  • Author

    Yu Ning Zhao ; Gang Du ; Jin Feng Kang ; Xiao Yan Liu ; Ruqi Han

  • Author_Institution
    Inst. of Microelectron., Peking Univ., Beijing
  • fYear
    2008
  • fDate
    9-11 Sept. 2008
  • Firstpage
    133
  • Lastpage
    136
  • Abstract
    In this paper, an analytical 2D current model of Double-Gate Schottky-Barrier MOSFETs (DG SB MOSFETs) is developed, which takes the advantage of the 2D potential distribution. Simulation results have shown that current density undergo notable changes along the channel depth directions, indicating that Ids and Vth calculated by 2D current model achieve a better accuracy than Surf model.
  • Keywords
    MOSFET; Schottky barriers; current density; analytical 2D current model; channel depth directions; current density; double-gate Schottky-barrier MOSFET; Analytical models; CMOS technology; Current density; Electric potential; Intrusion detection; MOSFETs; Schottky barriers; Semiconductor process modeling; Shape; Tunneling; 2D potential distribution; Schottky-Barrier; Tunneling current;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Simulation of Semiconductor Processes and Devices, 2008. SISPAD 2008. International Conference on
  • Conference_Location
    Hakone
  • Print_ISBN
    978-1-4244-1753-7
  • Type

    conf

  • DOI
    10.1109/SISPAD.2008.4648255
  • Filename
    4648255
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3053569