• DocumentCode
    3053945
  • Title

    Simulation of electronic transport in single nanobelt tin dioxide gas sensors

  • Author

    Andrei, P. ; Fields, L.L. ; Zheng, J.P. ; Cheng, Y. ; Xiong, P.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Florida A&M Univ. & Florida State Univ., Tallahassee, FL, USA
  • fYear
    2009
  • fDate
    9-11 Dec. 2009
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    In this presentation we discuss our approach for the modeling and simulation of single nanobelt metal-oxide chemical sensors with FET structure. Experimental data is used to test the validity of our approach.
  • Keywords
    chemical sensors; nanobelts; semiconductor device models; FET structure; electronic transport; metal-oxide chemical sensors; single nanobelt tin dioxide gas sensors; Chemical sensors; Chemical technology; Doping; Educational institutions; FETs; Gas detectors; Gases; Hydrogen; Sensor phenomena and characterization; Tin;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Device Research Symposium, 2009. ISDRS '09. International
  • Conference_Location
    College Park, MD
  • Print_ISBN
    978-1-4244-6030-4
  • Electronic_ISBN
    978-1-4244-6031-1
  • Type

    conf

  • DOI
    10.1109/ISDRS.2009.5378002
  • Filename
    5378002
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3053945