Effect of random impurities on transport characteristics of nano-scale MOSFET

Author

Nikov, Gennady Mil ; Mori, Nobuya ; Kamakura, Yoshinari ; Ezaki, Tatsuya

Author_Institution

Dept. of Electr., Electron. & Inf. Eng., Osaka Univ., Suita

fYear

2008

fDate

9-11 Sept. 2008

Firstpage

213

Lastpage

216

Abstract

Recently, we have proposed a new method for device simulations which allows for splitting the device area into a set of independent elements and computing all the physical observables in the form of local spectral representation. The shape of the device elements and their internal coordinate representation are arbitrary which offers a natural way to treat singular dopant charge distribution by choosing appropriate device fragmentation scheme. We have applied our method to study the impact of an attractive ion in intrinsic Si channel to the MOSFET transport characteristics. We have observed an intrinsic bistability in biased MOSFETs related with two possible ion charge screening mechanisms.

Keywords

MOSFET; nanotechnology; silicon; Si; device fragmentation; device simulations; intrinsic silicon channel; ion charge screening mechanisms; nanoscale MOSFET; random impurities; singular dopant charge distribution; transport characteristics; CMOS technology; Computational modeling; Impurities; Kinetic energy; MOSFET circuits; Nanoscale devices; Nanowires; Quantum computing; Resonance; Wave functions;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices, 2008. SISPAD 2008. International Conference on

Conference_Location

Hakone

Print_ISBN

978-1-4244-1753-7

Type

conf

DOI

10.1109/SISPAD.2008.4648275

Filename

4648275