Title :
Effect of random impurities on transport characteristics of nano-scale MOSFET
Author :
Nikov, Gennady Mil ; Mori, Nobuya ; Kamakura, Yoshinari ; Ezaki, Tatsuya
Author_Institution :
Dept. of Electr., Electron. & Inf. Eng., Osaka Univ., Suita
Abstract :
Recently, we have proposed a new method for device simulations which allows for splitting the device area into a set of independent elements and computing all the physical observables in the form of local spectral representation. The shape of the device elements and their internal coordinate representation are arbitrary which offers a natural way to treat singular dopant charge distribution by choosing appropriate device fragmentation scheme. We have applied our method to study the impact of an attractive ion in intrinsic Si channel to the MOSFET transport characteristics. We have observed an intrinsic bistability in biased MOSFETs related with two possible ion charge screening mechanisms.
Keywords :
MOSFET; nanotechnology; silicon; Si; device fragmentation; device simulations; intrinsic silicon channel; ion charge screening mechanisms; nanoscale MOSFET; random impurities; singular dopant charge distribution; transport characteristics; CMOS technology; Computational modeling; Impurities; Kinetic energy; MOSFET circuits; Nanoscale devices; Nanowires; Quantum computing; Resonance; Wave functions;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2008. SISPAD 2008. International Conference on
Conference_Location :
Hakone
Print_ISBN :
978-1-4244-1753-7
DOI :
10.1109/SISPAD.2008.4648275
