Title :
Effects of wavefunction modulation on electron transport in ultrathin-body DG MOSFETs
Author :
Mori, Nobuya ; Minari, Hideki
Author_Institution :
Div. of Electr., Electron. & Inf. Eng., Osaka Univ., Suita
Abstract :
Current-voltage characteristics of ultrathin-body double-gate MOSFETs are calculated within non-equilibrium Greenpsilas function formalism including g-type, f-type, and acoustic phonon scattering. By comparing results under asymmetric and symmetric bias conditions, wavefunction modulation effects on transport characteristics are investigated. On-current reduction ratio under symmetric bias condition becomes significantly smaller than that under asymmetric bias condition when silicon-body thickness t gsim 3 nm.
Keywords :
Green´s function methods; MOSFET; acoustic wave scattering; electron transport theory; Green´s function formalism; acoustic phonon scattering; current-voltage characteristics; electron transport; ultrathin-body double-gate MOSFET; wavefunction modulation; Acoustic scattering; Effective mass; Electrons; Equations; Green´s function methods; MOSFETs; Neodymium; Particle scattering; Phonons; Silicon on insulator technology; MOSFET; NEGF; phonon scattering;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2008. SISPAD 2008. International Conference on
Conference_Location :
Hakone
Print_ISBN :
978-1-4244-1753-7
DOI :
10.1109/SISPAD.2008.4648276
