Title :
Quaternary AlInGaN photodetectors with MIS structure
Author :
Hung, H. ; Chang, S.J. ; Young, S.J. ; Lin, Y.C. ; Wang, S.M. ; Chen, C.H.
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
Abstract :
In this research, effects of thermal annealing on the performance of AlInGaN Metal-Insulator-Semiconductor photodetectors have be investigated by I-V characteristics and responsivity measurement. In addition, Al0.25In0.04Ga0.71N MIS photodetectors with different SiO2 thickness were also be fabricated to verify the the influence of inserting SiO2 layer on performance of MIS photodetectors.
Keywords :
III-V semiconductors; MIS devices; annealing; indium compounds; photodetectors; semiconductor device manufacture; silicon compounds; wide band gap semiconductors; Al0.25In0.04Ga0.71N; I-V characteristics; MIS structure; SiO2; metal-insulator-semiconductor photodetectors; quaternary photodetectors; responsivity measurement; thermal annealing; Aluminum gallium nitride; Dark current; Educational institutions; Gallium nitride; Lattices; Leakage current; Photoconductivity; Photodetectors; Photodiodes; Photonic band gap;
Conference_Titel :
Semiconductor Device Research Symposium, 2009. ISDRS '09. International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-6030-4
Electronic_ISBN :
978-1-4244-6031-1
DOI :
10.1109/ISDRS.2009.5378012
