3-State behavior in quantum dot gate FETs

Author

Jain, Faquir ; Karmakar, Supriya ; Alamoody, Fuad ; Suarez, Ernesto ; Gogna, Mukesh ; Chan, Pik-Yiu ; Chandy, John ; Miller, Barry ; Heller, Evan

Author_Institution

Electr. & Comput. Eng. Dept., Univ. of Connecticut, Storrs, CT, USA

fYear

2009

fDate

9-11 Dec. 2009

Firstpage

1

Lastpage

2

Abstract

This paper presents observation of intermediate state in quantum dot gate InGaAs FETs. The crosssectional schematic of a InGaAs FET consisting of a thin II-VI (nearly lattice matched) tunnel insulator was shown. Two layers of GeO_x-cladded Ge dots are assembled on a multi-layered ZnSe/ZnMgS/ZnSe gate insualtor region (grown using a photoassisted metalorganic chemical vapor deposition technique) between the source and drain regions. The drain current-gate voltage transfer characteristic of a fabricated InGaAs FET was also shown.

Keywords

II-VI semiconductors; III-V semiconductors; MOCVD coatings; field effect transistors; germanium compounds; indium compounds; quantum dots; zinc compounds; GeO_x; InGaAs; ZnSe-ZnMgS-ZnSe; drain current gate voltage transfer; gate insualtor; photoassisted metalorganic chemical vapor deposition; quantum dot gate FET; tunnel insulator; Assembly; Energy states; FETs; Indium gallium arsenide; Insulation; Quantum computing; Quantum dots; Threshold voltage; Tunneling; Zinc compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2009. ISDRS '09. International

Conference_Location

College Park, MD

Print_ISBN

978-1-4244-6030-4

Electronic_ISBN

978-1-4244-6031-1

Type

conf

DOI

10.1109/ISDRS.2009.5378013

Filename

5378013