DocumentCode
3054152
Title
3-D stress simulation using simple quasi-models of gate oxidation and Silicidation
Author
Fujinaga, M. ; Yamauchi, T. ; Kamohara, S. ; Nishida, A.
Author_Institution
TCAD Int. Inc., Tokyo
fYear
2008
fDate
9-11 Sept. 2008
Firstpage
245
Lastpage
248
Abstract
We present 3-D stress simulation using simple quasi-models of gate oxidation and Silicidation. We show a good agreement between simulation and experiment about dependency of NMOSFETpsilas saturation current (mobilities) on LOD (Local Oxidation Definition) and TWX (Trench Width of X-direction).
Keywords
MOSFET; oxidation; semiconductor device models; 3D stress simulation; NMOSFET saturation current; X-direction trench width; gate oxidation; local oxidation definition; quasi-models; silicidation; Compressive stress; Computational modeling; Filling; MOSFET circuits; Oxidation; Semiconductor device modeling; Silicidation; Silicides; Silicon; Surfaces; 3-D stresss simulation; MOS transistor; Mobility; Oxidation; Piezo resistance model; Silicidation;
fLanguage
English
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices, 2008. SISPAD 2008. International Conference on
Conference_Location
Hakone
Print_ISBN
978-1-4244-1753-7
Type
conf
DOI
10.1109/SISPAD.2008.4648283
Filename
4648283
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