Title :
3-D stress simulation using simple quasi-models of gate oxidation and Silicidation
Author :
Fujinaga, M. ; Yamauchi, T. ; Kamohara, S. ; Nishida, A.
Author_Institution :
TCAD Int. Inc., Tokyo
Abstract :
We present 3-D stress simulation using simple quasi-models of gate oxidation and Silicidation. We show a good agreement between simulation and experiment about dependency of NMOSFETpsilas saturation current (mobilities) on LOD (Local Oxidation Definition) and TWX (Trench Width of X-direction).
Keywords :
MOSFET; oxidation; semiconductor device models; 3D stress simulation; NMOSFET saturation current; X-direction trench width; gate oxidation; local oxidation definition; quasi-models; silicidation; Compressive stress; Computational modeling; Filling; MOSFET circuits; Oxidation; Semiconductor device modeling; Silicidation; Silicides; Silicon; Surfaces; 3-D stresss simulation; MOS transistor; Mobility; Oxidation; Piezo resistance model; Silicidation;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2008. SISPAD 2008. International Conference on
Conference_Location :
Hakone
Print_ISBN :
978-1-4244-1753-7
DOI :
10.1109/SISPAD.2008.4648283
