Title :
Effect of current injection efficiency on efficiency-droop in InGaN quantum well light-emitting diodes
Author :
Zhao, Hongping ; Liu, Guangyu ; Arif, Ronald A. ; Tansu, Nelson
Author_Institution :
Dept. of Electr. & Comput. Eng., Lehigh Univ., Bethlehem, PA, USA
Abstract :
In this paper, the current injection efficiency (¿injection) and internal quantum efficiency (¿IQE) of InGaN QWs are investigated. Due to the existence of the polarization field in the InGaN QW, the band bending of the band edge potential leads to thermionic carrier escape from InGaN QW GaN barrier regions. The ¿injection is the fraction of injected current that recombines in the QW active region, and the radiative efficiency (¿Radiative) is the fraction of recombination current in QW that recombines radiatively. The ¿IQE can be expressed as the product of ¿injection and ¿Radiative. Here, the current injection efficiency model is developed based on current continuity relation for drift and diffusion carrier transport across the barrier, and the radiative efficiency model is based on self consistent 6-band k·p method.
Keywords :
III-V semiconductors; charge injection; gallium compounds; indium compounds; light emitting diodes; semiconductor quantum wells; wide band gap semiconductors; InGaN; band bending; current injection efficiency; diffusion carrier transport; drift carrier transport; efficiency-droop; internal quantum efficiency; polarization field; quantum well light-emitting diodes; radiative efficiency; the band edge potential; thermionic carrier; Aluminum gallium nitride; Charge carrier density; Current density; Educational institutions; Gallium nitride; Heating; Light emitting diodes; Optical computing; Quantum computing; Radiative recombination;
Conference_Titel :
Semiconductor Device Research Symposium, 2009. ISDRS '09. International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-6030-4
Electronic_ISBN :
978-1-4244-6031-1
DOI :
10.1109/ISDRS.2009.5378014
