Design and Fabrication of Microfluidic Devices: MOSFET & Capacitor

Author

Osman, R.A. ; Esa, S.R. ; Poopalan, P.

Author_Institution

Northern Malaysia Univ. Coll. of Eng., Perlis

fYear

2007

fDate

8-10 Nov. 2007

Firstpage

321

Lastpage

327

Abstract

Microfluidic devices, based on silicon, are fabricated by photolithography, wet chemical etching with focus on an liquid conduction channel n-channel depletion MOSFET and a silica-liquid dielectric capacitor. Masks for both devices were designed with AutoCAD and printed on transparencies. Fabrication on p-<100> 4" Si wafers were executed and the devices were marginally characterized due to complications. The gate channel for the liquid FET (LFET) were set to four-sizes, which are 250 mum, 500 mum, 750 mum an 1000 mum. The liquid capacitor (LCap) size was limited to only two, for lack of space on the wafer. A variety of processes were used to fabricate these devices. Tests show feasibility of the idea but proves process and process parameter control is extremely important and critical.

Keywords

MOSFET; capacitors; etching; microfluidics; photolithography; silicon; AutoCAD; Si; capacitor design; liquid FET; liquid capacitor; liquid conduction channel n-channel depletion MOSFET; microfluidic devices; photolithography; process parameter control; silica-liquid dielectric capacitor; silicon wafers; size 1000 mum; size 250 mum; size 500 mum; size 750 mum; wet chemical etching; Capacitors; Chemicals; Dielectric devices; Dielectric liquids; Fabrication; Lithography; MOSFET circuits; Microfluidics; Silicon; Wet etching;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics Manufacturing and Technology, 31st International Conference on

Conference_Location

Petaling Jaya

ISSN

1089-8190

Print_ISBN

978-1-4244-0730-9

Electronic_ISBN

1089-8190

Type

conf

DOI

10.1109/IEMT.2006.4456474

Filename

4456474