Title :
CF4 plasma treated poly-Si film by PECVD for high-k PrTiO3 poly-Si TFTs
Author :
Pan, Tung-Ming ; Chang, Chih-Jen ; Chan, Ching-Lin ; Su, Sheng-Han ; Lin, Wu-Ching
Author_Institution :
Dept. of Electron. Eng., Chang Gung Univ., Taoyuan, Taiwan
Abstract :
The authors have fabricated high-performance CF4 plasma treated poly-Si TFTs with a high-k PrTiO3 gate dielectric. The electrical characteristics such as the threshold voltage, subthreshold swing, ION/IOFF current ratio, and carrier mobility are effectively improved. In addition, the CF4 plasma treatment improves the HC and PBTI immunity due to the formation of Si-F bonds. The CF4 plasma treatment is a simple, effective and process-compatible method to fabricate high-performance and high-reliability PrTiO3 poly-Si TFTs.
Keywords :
high-k dielectric thin films; plasma CVD; praseodymium compounds; semiconductor device reliability; silicon; thin film transistors; CF4; PECVD; PrTiO3; Si; electrical characteristics; high-k gate dielectric; plasma treatment; poly-Si TFT; reliability; subthreshold swing; thin film transistor; threshold voltage; High K dielectric materials; High-K gate dielectrics; Plasma density; Plasma devices; Plasma displays; Plasma properties; Plasma temperature; Stress; Thin film transistors; Threshold voltage;
Conference_Titel :
Semiconductor Device Research Symposium, 2009. ISDRS '09. International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-6030-4
Electronic_ISBN :
978-1-4244-6031-1
DOI :
10.1109/ISDRS.2009.5378022
