Title :
Operational PRAM analysis with PVT variations using process-aware compact model
Author :
Kim, Y.T. ; Kim, Y.G. ; Yang, G.Y. ; Lee, K.H. ; Horii, H. ; An, H.G. ; Kong, J.H. ; Lee, K.J. ; Park, M.H. ; Park, Y.K. ; Yoo, M.H.
Author_Institution :
Semicond. R&D Center, Samsung Electron. Co., Ltd., Hwasung
Abstract :
In this paper, we present for the first time a process-aware compact model to describe cell characteristics of PRAM. Applying this model, we have performed hierarchical sensitivity analysis on the process, voltage, and temperature (PVT) variations and studied impacts on the sensing margin.
Keywords :
phase change memories; operational PRAM analysis; process variations; process-aware compact model; temperature variations; voltage variations; Analytical models; Circuit simulation; Computer aided engineering; Electric resistance; Electronic mail; Equations; Phase change random access memory; Research and development; Sensitivity analysis; Voltage; PRAM; compact model; phase change; simulation; variation;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2008. SISPAD 2008. International Conference on
Conference_Location :
Hakone
Print_ISBN :
978-1-4244-1753-7
DOI :
10.1109/SISPAD.2008.4648289
