Title :
Copper wire reliability and bonding integrity robustness on cratering sensitive bond pad structure
Author :
Chian, Lim Chee ; Chai, Ng Kock ; Chia, Lee Cher ; King, Chai Min ; Seng, Lim Ong ; Yau, Chua Kok
Abstract :
With the continue soaring of world´s gold price semiconductor companies are force to re-channel their effort to copper wire capability and reliability development as packaging interconnect material to replace gold wire. Besides, cost saving copper wire has many advantages over gold in term of mechanical and good electrical together with improve thermal conductance. Its also offer stable electrical resistance after thermal aging with lower and stable intermetallic growth on top of lower diffusion rate. These advantages have lead to lower heat generation and improved bonding thermal reliability integration compare to its gold wire predecessor. Cratering and oxidation are the two main challenges copper wire faced due to the nature of copper materials properties itself. The 5N & 4N copper wire sparking power and time influence towards ball bond grain size distribution and bonding stress correlation to cratering sensitve bond pad structure couple with optimum bond parameter were studied in addition to FEA Cu ball stress and strain distribution modeling. Mechanical, thermal and moisture reliability stress test like TC 1000X, HTS @175 Deg C, HTRB, H3TRB, PCT @ 96 hrs tests were performed on top of pad etching, ball shear and wire pull destructive test were assess to validate the robustness of copper wire bonding integrity.
Keywords :
copper; diffusion; electric resistance; etching; finite element analysis; integrated circuit bonding; integrated circuit packaging; integrated circuit reliability; integrated circuit testing; lead bonding; oxidation; stress-strain relations; thermal conductivity; Cu; FEA modeling; ball bond grain size distribution; ball shear test; bonding stress correlation; copper wire bonding integrity; copper wire reliability; copper wire sparking power; cratering-sensitive bond pad structure; diffusion rate; electrical resistance; intermetallic growth; oxidation; packaging interconnect material; pad etching; strain distribution modeling; thermal aging; thermal conductance; wire pull destructive test; Bonding; Copper; Gold; Materials reliability; Robustness; Semiconductor device packaging; Semiconductor device reliability; Testing; Thermal stresses; Wire;
Conference_Titel :
Electronics Manufacturing and Technology, 31st International Conference on
Conference_Location :
Petaling Jaya
Print_ISBN :
978-1-4244-0730-9
Electronic_ISBN :
1089-8190
DOI :
10.1109/IEMT.2006.4456479