Title :
A surface potential model for bulk MOSFET which accurately reflects channel doping profile expelling fitting parameters
Author :
Sakamoto, Hironori ; Watanabe, Kentaro ; Arimoto, Hiroshi ; Tanizawa, Motoaki ; Kumashiro, Shigetaka
Author_Institution :
R&D Strategy Dept., MIRAI-Selete, Sagamihara
Abstract :
A surface potential model for bulk MOSFET which accurately reflects channel doping profile is proposed. Only physical parameters such as device structures and doping profiles are used in the proposed model. For the vertical direction to channel, the model consistently integrates both surface potential and arbitral channel doping profiles in Poisson equation by using HiSIM2 framework. For channel direction, the model improves Pangpsilas quasi-2D Gaussian box model by taking the effect of source/drain junction depth into account. To accurately reflect the effect of the doping profile, drain current is evaluated by numerical integration using the calculated surface potential. The dependence of both short channel effect (SCE) and the reverse short channel effect (RSCE) on Vds, Vbs, channel length, junction depth and channel doping profiles, are expressed accurately without using any fitting parameters.
Keywords :
MOSFET; Poisson equation; semiconductor device models; MOSFET; Pangpsilas quasi-2D Gaussian box model; Poisson equation; channel doping; numerical integration; reverse short channel effect; surface potential model; Charge carrier density; Doping profiles; Electronic mail; MOSFET circuits; Poisson equations; Research and development; Semiconductor process modeling; Solid modeling; Surface fitting; Surface reconstruction; MOSFET; Poisson equation; Surface potential model; channel doping profile; reverse short channel effect; short channel effect;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2008. SISPAD 2008. International Conference on
Conference_Location :
Hakone
Print_ISBN :
978-1-4244-1753-7
DOI :
10.1109/SISPAD.2008.4648290
