Wigner Monte Carlo approach to quantum transport in nanodevices

Author

Dollfus, P. ; Querlioz, D. ; Saint-Martin, J. ; Do, V.-N. ; Bournel, A.

Author_Institution

Inst. d´´Electron. Fondamentale, Univ. Paris-Sud, Orsay

fYear

2008

fDate

9-11 Sept. 2008

Firstpage

277

Lastpage

280

Abstract

The Wigner Monte Carlo approach is shown to provide an efficient way to study quantum transport in the presence of scattering and to connect semi-classical to quantum transport. The study of resonant tunneling diodes highlights the physics of the impact of scattering on resonant tunneling, and on electron decoherence and localization. The simulation of nano-MOSFET evidences a mixed regime, where both quantum transport and scattering play a significant role.

Keywords

MOSFET; Monte Carlo methods; Wigner distribution; nanotechnology; resonant tunnelling diodes; Wigner Monte Carlo approach; electron decoherence; electron localization; nanoMOSFET; nanodevices; quantum transport; resonant tunneling diodes; Boltzmann equation; Electrons; Green function; Monte Carlo methods; Particle scattering; Physics; Quantum computing; Quantum mechanics; Resonant tunneling devices; Semiconductor diodes; Green function; MOSFETs; Monte Carlo methods; Quantum theory; Resonant Tunneling Diodes; Tunneling; Wigner distributions;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices, 2008. SISPAD 2008. International Conference on

Conference_Location

Hakone

Print_ISBN

978-1-4244-1753-7

Type

conf

DOI

10.1109/SISPAD.2008.4648291

Filename

4648291