Title :
Novel infrared detectors based on semiconductor quantum dots
Author :
Chen, Zhonghui ; Kim, Eui-Tae ; Ye, Zhengmao ; Campbell, Joe C. ; Madhukar, Anupam
Author_Institution :
Dept. of Phys., City Univ. of New York, Brooklyn, NY, USA
fDate :
27 Sept.-1 Oct. 2004
Abstract :
This paper reviews recent progresses in developing self-assembled InAs/GaAs quantum dots based infrared photodetectors, especially, with n-i(QDs)-n configuration. These significant progresses indicate a realistic hope that QDIPs can be exploited for mid-infrared imaging application.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; infrared detectors; photoconductivity; photodetectors; self-assembly; semiconductor quantum dots; InAs-GaAs; QD infrared photodetectors; mid-infrared imaging application; semiconductor quantum dots; Infrared detectors; Optical scattering; Optoelectronic devices; Photodetectors; Physics; Potential well; Quantum dots; Self-assembly; Semiconductor materials; US Department of Transportation;
Conference_Titel :
Infrared and Millimeter Waves, 2004 and 12th International Conference on Terahertz Electronics, 2004. Conference Digest of the 2004 Joint 29th International Conference on
Print_ISBN :
0-7803-8490-3
DOI :
10.1109/ICIMW.2004.1422042
