Phonon transport in electronic devices: From diffusive to ballistic regime

Author

Thouy, B. ; Mazellier, J.-P. ; Barbe, J.C. ; Carval, G. Le

Author_Institution

LETI-MINATEC, Commissariat a l´´Energie Atomique (CEA), Grenoble

fYear

2008

fDate

9-11 Sept. 2008

Firstpage

285

Lastpage

288

Abstract

This paper presents a Lattice Boltzmann Model applied to phonon transport in silicon-based films, implemented with the OpenLB library [1]. This model is based on the discretization of Boltzmann equation with the ldquograyrdquo model for phonons. By this approach we can treat heat transfer in complex structures and various materials. We have validated our model by comparing temperature profiles and thermal conductivities in thin films to literature data. Finally, we discuss an improvement of the method in the ballistic case.

Keywords

MOSFET; ballistic transport; heat transfer; lattice Boltzmann methods; silicon; Lattice Boltzmann model; ballistic regime; complex structures; diffusive regime; electronic devices; heat transfer; phonon transport; silicon based films; thermal conductivities; Boltzmann equation; Conducting materials; Heat transfer; Lattice Boltzmann methods; Libraries; Phonons; Semiconductor films; Temperature; Thermal conductivity; Transistors; Fully Depleted MOSFET; Lattice Boltzmann Method; Silicon On Insulator; heat transfer; phonon transport;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices, 2008. SISPAD 2008. International Conference on

Conference_Location

Hakone

Print_ISBN

978-1-4244-1753-7

Type

conf

DOI

10.1109/SISPAD.2008.4648293

Filename

4648293