DocumentCode
3054459
Title
Test-architecture optimization for TSV-based 3D stacked ICs
Author
Noia, Brandon ; Goel, Sandeep Kumar ; Chakrabarty, Krishnendu ; Marinissen, Erik Jan ; Verbree, Jouke
Author_Institution
Dept. Electr. & Comput. Eng., Duke Univ., Durham, NC, USA
fYear
2010
fDate
24-28 May 2010
Firstpage
24
Lastpage
29
Abstract
Testing of 3D stacked ICs (SICs) is becoming increasingly important in the semiconductor industry. In this paper, we address the problem of test architecture optimization for 3D stacked ICs implemented using Through-Silicon Vias (TSVs) technology. We consider 3D-SICs with both fixed given and yet-to-be-designed test architectures on each die and show that both corresponding problem variants are NP-hard. We next present mathematical programming techniques to derive optimal solutions for these problems. Experimental results for three handcrafted 3D-SICs of various SOCs from the ITC´02 SOC test benchmarks show that compared to the baseline method of sequentially testing all dies in a stack, the proposed solutions can achieve up to a 57% reduction in test time. We also show that increasing the number of test pins provides a greater reduction in test time compared to an increase in the number of TSVs. Furthermore, it is shown that 3D stacks with large and complex dies at lower layers require less test time than stacks with complex dies at higher layers.
Keywords
circuit complexity; integrated circuit testing; mathematical programming; semiconductor industry; system-on-chip; three-dimensional integrated circuits; 3D-SIC technology; NP-hard problem; SOC test benchmarks; TSV-based 3D stacked IC testing; mathematical programming techniques; semiconductor industry; test-architecture optimization; Benchmark testing; Electronics industry; Joining processes; Marine technology; Pins; Semiconductor device testing; Sequential analysis; Silicon carbide; Stacking; Through-silicon vias;
fLanguage
English
Publisher
ieee
Conference_Titel
Test Symposium (ETS), 2010 15th IEEE European
Conference_Location
Praha
ISSN
1530-1877
Print_ISBN
978-1-4244-5834-9
Electronic_ISBN
1530-1877
Type
conf
DOI
10.1109/ETSYM.2010.5512787
Filename
5512787
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