Investigation of the device design challenges and optimization issues associated with complementary SiGe HBT scaling

Complementary bipolar technology (npn + pnp BJTs) has long been considered the "goId-standard" for analog applications requiring high speed, low noise, high bandwidth, large voltage swing, and large output drive. Bandgap-engineered complementary SiGe (C-SiGe) HBTs can provide significant leverage in the multiple tradeoffs involved in designing npn and pnp BJTs with matched performance (e.g., comparable/r)However, the inherent minority carrier transport issues associated with the pnp SiGe HBT device design need to be carefully addressed in order to successfully scale C-SiGe HBT technology for higher frequency operation. This TCAD-based investigation presents for the first time a comprehensive study of the device design challenges and optimization issues which will be necessarily encountered in scaling C-SiGe HBTs for high-performance analog applications.