Title :
Atomistic modeling of dopant diffusion and segregation in strained SiGeC
Author :
Dunham, Scott T. ; Guo, Hsiu-Wu ; Song, Jakyoung ; Ahn, Chihak
Author_Institution :
Dept. of Electr. Eng., Univ. of Washington, Seattle, WA
Abstract :
In this work, density functional theory calculations are used to calculate the separate effects of stress/strain and chemical binding on diffusion, segregation and solubility of dopants in group IV alloy materials. Kinetic lattice Monte Carlo calculations are used to extract the effects of anisotropic stress and random alloy distributions. We find that segregation and solubility is dominated by stress effects, but that chemical interactions of Ge and C with point defects have a significant effect on diffusivity in SiGeC alloys.
Keywords :
Ge-Si alloys; Monte Carlo methods; carbon; semiconductor materials; stress-strain relations; Monte Carlo calculations; SiGeC; anisotropic stress; atomistic modeling; chemical binding; density functional theory calculations; dopant diffusion; random alloy distributions; stress-strain effects; Anisotropic magnetoresistance; Capacitive sensors; Chemicals; Density functional theory; Germanium alloys; Kinetic theory; Lattices; Monte Carlo methods; Semiconductor process modeling; Stress;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2008. SISPAD 2008. International Conference on
Conference_Location :
Hakone
Print_ISBN :
978-1-4244-1753-7
DOI :
10.1109/SISPAD.2008.4648305
