DocumentCode
3054611
Title
2D/3D NEGF modeling of the impact of random dopants /dopant aggregation in silicon nano-transistors
Author
Barker, John R.
Author_Institution
Dept. of Electron. & Electr. Eng., Univ. of Glasgow, Glasgow
fYear
2008
fDate
9-11 Sept. 2008
Firstpage
337
Lastpage
340
Abstract
The discrete nature of dopants becomes apparent in nano-scaled devices leading to microvariability problems which cause large fluctuations in the performance of macroscopically identical devices. Since self-averaging fails, the approach reviewed here utilises self-consistent non-equilibrium Green function modelling to evaluate the effects of discrete random dopants in source and drain non-perturbatively.
Keywords
nanotechnology; semiconductor doping; transistors; dopant aggregation; nonequilibrium Green function; random dopants; silicon nanotransistors; Doping; Green function; Impurities; Nanoscale devices; Poisson equations; Quantum computing; Resonance; Semiconductor process modeling; Silicon; Threshold voltage; Green functions; impurities; nanotransistors; random dopants; resonances; resonant tunnelling;
fLanguage
English
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices, 2008. SISPAD 2008. International Conference on
Conference_Location
Hakone
Print_ISBN
978-1-4244-1753-7
Type
conf
DOI
10.1109/SISPAD.2008.4648306
Filename
4648306
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