Title :
Characterization of 1/f noise in scaled high-K NMOS transistors and SONOS nonvolatile semiconductor memory (NVSM) devices
Author :
Zhang, Xiaochen ; Liyanage, Luckshitha S. ; Eichenlaub, Nathan ; White, Marvin H.
Author_Institution :
Electr. & Comput. Eng. Dept., Lehigh Univ., Bethlehem, PA, USA
Abstract :
We have performed 1/f noise characterizations on both scaled high-K, metal-gate, NMOS transistors and NSONOS NVSMs. Experimental results indicate a trap density in high-K NMOS devices, which is several orders of magnitude higher than NSONOS NVSMs. The increased 1/f noise in high-K devices remains a reliability issue for device engineering and circuit design.
Keywords :
1/f noise; MOS integrated circuits; random-access storage; 1/f noise; SONOS nonvolatile semiconductor memory devices; scaled high-K NMOS transistors; trap density; Circuit noise; High K dielectric materials; High-K gate dielectrics; MOS devices; MOSFETs; Nonvolatile memory; Reliability engineering; SONOS devices; Semiconductor device noise; Semiconductor memory;
Conference_Titel :
Semiconductor Device Research Symposium, 2009. ISDRS '09. International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-6030-4
Electronic_ISBN :
978-1-4244-6031-1
DOI :
10.1109/ISDRS.2009.5378039
