DocumentCode :
3054678
Title :
Modeling of high-k-Metal-Gate-stacks using the non-equilibrium Green’s function formalism
Author :
Baumgartner, O. ; Karner, M. ; Kosina, H.
Author_Institution :
Inst. for Microelectron., Tech. Univ. Wien, Wien
fYear :
2008
fDate :
9-11 Sept. 2008
Firstpage :
353
Lastpage :
356
Abstract :
A high-k-metal-gate stack has been investigated using an open boundary model based on the non-equilibrium Greenpsilas function formalism. The numerical energy integration, which is crucial because of the very narrow resonant states, is pointed out in detail. The model has been benchmarked against the established classical and closed boundary Schrodinger-Poisson model. In contrast to the established models, the solution covers distinct resonant states with a realistic broadening and results in a major difference in the current density spectrum.
Keywords :
Green´s function methods; Poisson equation; Schrodinger equation; integration; transistors; closed boundary Schrodinger-Poisson model; high-k-metal-gate-stacks; nonequilibrium Green´s function; numerical energy integration; open boundary model; Charge carrier density; Current density; Dielectrics; Electrons; Green´s function methods; Leakage current; Microelectronics; Optical scattering; Quantum mechanics; Resonance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2008. SISPAD 2008. International Conference on
Conference_Location :
Hakone
Print_ISBN :
978-1-4244-1753-7
Type :
conf
DOI :
10.1109/SISPAD.2008.4648310
Filename :
4648310
Link To Document :
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