• DocumentCode
    3054786
  • Title

    The impact of the breakdown of Ohm´s law on switching delay due to reactive elements connected in series with a micro/nano-resistor

  • Author

    Arora, Vijay K. ; Bin Hashim, Abdul Manaf ; Chek, Desmond ; Saxena, Tanuj

  • Author_Institution
    Div. of Eng. & Phys., Wilkes Univ., Wilkes-Barre, PA, USA
  • fYear
    2009
  • fDate
    9-11 Dec. 2009
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    The transient effects in a nano/micro-scale channel are severely affected by the resistance blowup due to sublinear current-voltage characteristics leading to velocity and current saturation. This resistance blow-up effect increases the transit-time delay through the device that decreases as length of the conducting channel is decreased, but always larger than that predicted from the application of Ohm´s law. RC time constant is shown to enhance dramatically while RL time constant decreases considerably over and above the predictions of Ohm´s law.
  • Keywords
    semiconductor device breakdown; Ohm law; reactive elements; resistance blowup; sublinear current-voltage characteristics; switching delay; Delay effects; Educational institutions; Electric breakdown; Electric resistance; Parasitic capacitance; Physics; Resistors; Timing; Virtual colonoscopy; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Device Research Symposium, 2009. ISDRS '09. International
  • Conference_Location
    College Park, MD
  • Print_ISBN
    978-1-4244-6030-4
  • Electronic_ISBN
    978-1-4244-6031-1
  • Type

    conf

  • DOI
    10.1109/ISDRS.2009.5378044
  • Filename
    5378044