Title :
A new unified compact model for quasi-ballistic transport: Application to the analysis of circuit performances of a Double-Gate architecture
Author :
Martinie, S. ; Munteanu, Daniela ; Le Carval, Gilles ; Autran, J.L.
Author_Institution :
CEA-LETI MINATEC, Grenoble
Abstract :
We present here a new unified analytic model for ballistic and quasi-ballistic transport. Starting from the classical approach of Natori, we enhanced it by taking into account degeneracy and adding consistently an original modelling of short channel effect (SCE) and drain induced barrier lowering (DIBL) by including quantum confinement. Our model has been validated by comparisons with TCAD simulations and results from literature. Finally, we applied our model to simple circuit elements to evaluate potential performance of a double-gate architecture in a Verilog-A environment.
Keywords :
MOSFET; ballistic transport; oscillators; Natori approach; TCAD simulations; Verilog-A environment; circuit performances; double-gate architecture; drain induced barrier lowering; quantum confinement; quasiballistic transport; short channel effect; Analytical models; Backscatter; Ballistic transport; Circuit analysis; Electronic mail; Equations; MOSFET circuits; Performance analysis; Ring oscillators; Threshold voltage; Double-Gate MOSFET; Ring Oscillator; ballistic transport; compact model; quantum effect;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2008. SISPAD 2008. International Conference on
Conference_Location :
Hakone
Print_ISBN :
978-1-4244-1753-7
DOI :
10.1109/SISPAD.2008.4648316