A new unified compact model for quasi-ballistic transport: Application to the analysis of circuit performances of a Double-Gate architecture

Author

Martinie, S. ; Munteanu, Daniela ; Le Carval, Gilles ; Autran, J.L.

Author_Institution

CEA-LETI MINATEC, Grenoble

fYear

2008

fDate

9-11 Sept. 2008

Firstpage

377

Lastpage

380

Abstract

We present here a new unified analytic model for ballistic and quasi-ballistic transport. Starting from the classical approach of Natori, we enhanced it by taking into account degeneracy and adding consistently an original modelling of short channel effect (SCE) and drain induced barrier lowering (DIBL) by including quantum confinement. Our model has been validated by comparisons with TCAD simulations and results from literature. Finally, we applied our model to simple circuit elements to evaluate potential performance of a double-gate architecture in a Verilog-A environment.

Keywords

MOSFET; ballistic transport; oscillators; Natori approach; TCAD simulations; Verilog-A environment; circuit performances; double-gate architecture; drain induced barrier lowering; quantum confinement; quasiballistic transport; short channel effect; Analytical models; Backscatter; Ballistic transport; Circuit analysis; Electronic mail; Equations; MOSFET circuits; Performance analysis; Ring oscillators; Threshold voltage; Double-Gate MOSFET; Ring Oscillator; ballistic transport; compact model; quantum effect;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices, 2008. SISPAD 2008. International Conference on

Conference_Location

Hakone

Print_ISBN

978-1-4244-1753-7

Type

conf

DOI

10.1109/SISPAD.2008.4648316

Filename

4648316