Title :
Time- resolved photoluminescence studies of Al0.72Ga0.28N films with incommensurate chemical ordering
Author :
Wraback, M. ; Garrett, G.A. ; Shen, H. ; Bhattacharyya, A. ; Moustakas, T.D.
Abstract :
In this paper, we study the photoluminescence (PL) lifetimes in AlGaN alloys with incommensurate chemical ordering. AlGaN films were grown by RF plasma-assisted MBE under different kinetic conditions. The compositions in all films were maintained at a constant value of 72 % AlN mole fraction by using the same Al flux, while the kinetics of growth were controlled by varying the Ga flux and thus the III/V flux ratio during deposition of the various films, with some of the films grown under Ga-rich conditions and others under N-rich conditions. The structure of these films was previously investigated by XRD using synchrotron radiation and by SED-TEM.
Keywords :
III-V semiconductors; X-ray diffraction; aluminium compounds; crystal structure; gallium compounds; molecular beam epitaxial growth; photoluminescence; semiconductor thin films; synchrotron radiation; transmission electron microscopy; Al0.72Ga0.28N; Ga flux; III-V flux ratio; RF plasma-assisted MBE; SED-TEM; XRD; crystal structure; incommensurate chemical ordering; kinetic conditions; mole fraction; semiconductor thin films; synchrotron radiation; time-resolved photoluminescence; Aluminum alloys; Aluminum gallium nitride; Charge carrier processes; Chemicals; Diffraction; Photoluminescence; Pulse amplifiers; Spontaneous emission; Superlattices; Temperature;
Conference_Titel :
Semiconductor Device Research Symposium, 2009. ISDRS '09. International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-6030-4
Electronic_ISBN :
978-1-4244-6031-1
DOI :
10.1109/ISDRS.2009.5378052
