Time- resolved photoluminescence studies of Al0.72Ga0.28N films with incommensurate chemical ordering

Author

Wraback, M. ; Garrett, G.A. ; Shen, H. ; Bhattacharyya, A. ; Moustakas, T.D.

fYear

2009

fDate

9-11 Dec. 2009

Firstpage

1

Lastpage

2

Abstract

In this paper, we study the photoluminescence (PL) lifetimes in AlGaN alloys with incommensurate chemical ordering. AlGaN films were grown by RF plasma-assisted MBE under different kinetic conditions. The compositions in all films were maintained at a constant value of 72 % AlN mole fraction by using the same Al flux, while the kinetics of growth were controlled by varying the Ga flux and thus the III/V flux ratio during deposition of the various films, with some of the films grown under Ga-rich conditions and others under N-rich conditions. The structure of these films was previously investigated by XRD using synchrotron radiation and by SED-TEM.

Keywords

III-V semiconductors; X-ray diffraction; aluminium compounds; crystal structure; gallium compounds; molecular beam epitaxial growth; photoluminescence; semiconductor thin films; synchrotron radiation; transmission electron microscopy; Al_0.72Ga_0.28N; Ga flux; III-V flux ratio; RF plasma-assisted MBE; SED-TEM; XRD; crystal structure; incommensurate chemical ordering; kinetic conditions; mole fraction; semiconductor thin films; synchrotron radiation; time-resolved photoluminescence; Aluminum alloys; Aluminum gallium nitride; Charge carrier processes; Chemicals; Diffraction; Photoluminescence; Pulse amplifiers; Spontaneous emission; Superlattices; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2009. ISDRS '09. International

Conference_Location

College Park, MD

Print_ISBN

978-1-4244-6030-4

Electronic_ISBN

978-1-4244-6031-1

Type

conf

DOI

10.1109/ISDRS.2009.5378052

Filename

5378052