• DocumentCode
    3054935
  • Title

    Design and analysis of In0.53Ga0.47As/InP symmetric gain optoelectronic mixers

  • Author

    Zhang, Wang ; Emanetoglu, Nuri W. ; Bambha, Neal ; Bickford, Justin R.

  • Author_Institution
    Electr. & Comput. Eng., Univ. of Maine, Orono, ME, USA
  • fYear
    2009
  • fDate
    9-11 Dec. 2009
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    In this paper, In0.53Ga0.47As/InP heterosrrucrure based symmetric gain optoelectronic mixers were simulated with the Synopsis TCAD Sentaurus tools. These two-dimensional simulations were used to design both the layer structure for growth and the horizontal structure for the photolithography masks.
  • Keywords
    III-V semiconductors; indium compounds; integrated optoelectronics; masks; military equipment; mixers (circuits); photolithography; 2D simulation; In0.53Ga0.47As-InP; Synopsis TCAD Sentaurus tool; horizontal structure growth; layer structure design; photolithography masks; symmetric gain optoelectronic mixers; Chirp; Dark current; Doping; Educational institutions; Indium phosphide; Laboratories; Laser radar; Optical sensors; Performance gain; Photodetectors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Device Research Symposium, 2009. ISDRS '09. International
  • Conference_Location
    College Park, MD
  • Print_ISBN
    978-1-4244-6030-4
  • Electronic_ISBN
    978-1-4244-6031-1
  • Type

    conf

  • DOI
    10.1109/ISDRS.2009.5378053
  • Filename
    5378053
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3054935