Temperature dependence of the radiation power emitted by a superlattice subject to a high-frequency electric field

Author

Pavel´ev, D. ; Koshurinov, Yu. ; Demarina, N. ; Ustinov, V. ; Zhukov, A. ; Maleev, N. ; Vasilyev, A. ; Baryshev, A. ; Yagoubov, P. ; Whyborn, N.

Author_Institution

Radiophys. Dept., Nizhny Novgorod State Univ., Russia

fYear

2004

fDate

27 Sept.-1 Oct. 2004

Firstpage

279

Lastpage

280

Abstract

We present an experimental and theoretical study of the radiation power in the terahertz frequency range emitted by a GaAs/AlAs superlattice at 4-300 K. The non-biased superlattice was driven by an electric field with a frequency of 20 GHz. We measured the power spectrum of output signal and found that a decrease in the physical temperature leads to a significant increase in harmonic content.

Keywords

III-V semiconductors; aluminium compounds; frequency multipliers; gallium arsenide; microwave frequency convertors; semiconductor superlattices; signal generators; submillimetre wave generation; submillimetre waves; 20 GHz; 4 to 300 K; GaAs-AlAs; GaAs/AlAs superlattice; frequency multipliers; harmonic content; high frequency electric field; microwave frequency convertors; nonbiased superlattice; output signal power spectrum; radiation power emission; temperature dependence; terahertz frequency range emission; Doping; Electrons; Frequency; Gallium arsenide; Ohmic contacts; Power system harmonics; Semiconductor superlattices; Signal generators; Temperature dependence; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared and Millimeter Waves, 2004 and 12th International Conference on Terahertz Electronics, 2004. Conference Digest of the 2004 Joint 29th International Conference on

Print_ISBN

0-7803-8490-3

Type

conf

DOI

10.1109/ICIMW.2004.1422064

Filename

1422064