• DocumentCode
    3055005
  • Title

    Deeply degenerate p-type GaN grown by metal modulated epitaxy

  • Author

    Doolittle, W. Alan ; Moseley, Michael ; Trybus, Elaissa

  • Author_Institution
    Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
  • fYear
    2009
  • fDate
    9-11 Dec. 2009
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    In this study, a series of GaN Mg-doped samples were grown in a Riber 32 system.
  • Keywords
    III-V semiconductors; gallium compounds; semiconductor epitaxial layers; semiconductor growth; wide band gap semiconductors; GaN; Riber 32 system; deeply degenerate p-type GaN; metal modulated epitaxy; Conductivity; Crystallization; Educational institutions; Epitaxial growth; Gallium nitride; Maintenance engineering; Plasma temperature; Substrates; Temperature dependence; X-ray scattering;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Device Research Symposium, 2009. ISDRS '09. International
  • Conference_Location
    College Park, MD
  • Print_ISBN
    978-1-4244-6030-4
  • Electronic_ISBN
    978-1-4244-6031-1
  • Type

    conf

  • DOI
    10.1109/ISDRS.2009.5378056
  • Filename
    5378056
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3055005