Title :
Deeply degenerate p-type GaN grown by metal modulated epitaxy
Author :
Doolittle, W. Alan ; Moseley, Michael ; Trybus, Elaissa
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
Abstract :
In this study, a series of GaN Mg-doped samples were grown in a Riber 32 system.
Keywords :
III-V semiconductors; gallium compounds; semiconductor epitaxial layers; semiconductor growth; wide band gap semiconductors; GaN; Riber 32 system; deeply degenerate p-type GaN; metal modulated epitaxy; Conductivity; Crystallization; Educational institutions; Epitaxial growth; Gallium nitride; Maintenance engineering; Plasma temperature; Substrates; Temperature dependence; X-ray scattering;
Conference_Titel :
Semiconductor Device Research Symposium, 2009. ISDRS '09. International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-6030-4
Electronic_ISBN :
978-1-4244-6031-1
DOI :
10.1109/ISDRS.2009.5378056
