Title :
Getting the most from SiC MOSFETs: Optimizing conduction and switching losses for high performance power electronics applications
Author :
Matocha, Kevin ; Losee, Pete ; Glaser, John ; Nasadoski, Jeff ; Arthur, Steve ; Stevanovic, Ljubisa
Author_Institution :
Semicond. Technol. Lab., GE Global Res., Niskayuna, NY, USA
Abstract :
It is important to understand the properties of SiC MOSFETs that should be optimized to enhance the performance of advanced power. In this paper, the authors quantify the impact of the specific on-resistance and switching loss on determining the device current rating of SiC MOSFETs. This analysis is based on DC and transient characterization of GE 1200 V SiC MOSFETs with specific on-resistance of 5.2 m¿-cm2. The total device power dissipation including conduction and switching losses are quantified.
Keywords :
MOSFET; losses; power semiconductor devices; silicon compounds; switches; transients; wide band gap semiconductors; DC characterization; MOSFET; SiC; conduction loss; device current rating; on-resistance; power dissipation; power electronics application; switching loss; transient characterization; voltage 1200 V; Capacitance; Educational institutions; Frequency; Gallium nitride; MOSFETs; Performance loss; Power electronics; Silicon carbide; Silicon devices; Switching loss;
Conference_Titel :
Semiconductor Device Research Symposium, 2009. ISDRS '09. International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-6030-4
Electronic_ISBN :
978-1-4244-6031-1
DOI :
10.1109/ISDRS.2009.5378062
