Getting the most from SiC MOSFETs: Optimizing conduction and switching losses for high performance power electronics applications

Author

Matocha, Kevin ; Losee, Pete ; Glaser, John ; Nasadoski, Jeff ; Arthur, Steve ; Stevanovic, Ljubisa

Author_Institution

Semicond. Technol. Lab., GE Global Res., Niskayuna, NY, USA

fYear

2009

fDate

9-11 Dec. 2009

Firstpage

1

Lastpage

2

Abstract

It is important to understand the properties of SiC MOSFETs that should be optimized to enhance the performance of advanced power. In this paper, the authors quantify the impact of the specific on-resistance and switching loss on determining the device current rating of SiC MOSFETs. This analysis is based on DC and transient characterization of GE 1200 V SiC MOSFETs with specific on-resistance of 5.2 mÂ¿-cm². The total device power dissipation including conduction and switching losses are quantified.

Keywords

MOSFET; losses; power semiconductor devices; silicon compounds; switches; transients; wide band gap semiconductors; DC characterization; MOSFET; SiC; conduction loss; device current rating; on-resistance; power dissipation; power electronics application; switching loss; transient characterization; voltage 1200 V; Capacitance; Educational institutions; Frequency; Gallium nitride; MOSFETs; Performance loss; Power electronics; Silicon carbide; Silicon devices; Switching loss;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2009. ISDRS '09. International

Conference_Location

College Park, MD

Print_ISBN

978-1-4244-6030-4

Electronic_ISBN

978-1-4244-6031-1

Type

conf

DOI

10.1109/ISDRS.2009.5378062

Filename

5378062