Structure and defects in multilayer CVD graphene on C-face 6H-SiC

Determining the structure of multilayer graphene grown on 6H-SiC presents a problem common to other epitaxial systems. Accordingly, the configuration of such a film may be addressed in detail using electron microscopy techniques that are sensitive to crystallographic orientation. Initially, electron backscattered diffraction (EBSD) was used to determine the basic orientation of the graphene layer with respect to the C-Face (000-1) 6H-SiC substrate. Transmission electron microscopy (TEM) was then used to reveal the extended defects needed to bring the epitaxial layer into registry with the substrate. In this study, plan-view TEM (PVTEM) was shown to be particularly useful in giving a complete view of the crystallographic relationships between the graphene multilayer and the C-face 6H-SiC substrate.