Title :
Atomistic simulations for SiGe pMOS devices — Bandstructure to transport
Author :
Mehrotra, Saumitra R. ; Paul, Abhijeet ; Luisier, Mathieu ; Klimeck, Gerhard
Author_Institution :
Dept. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA
Abstract :
We have presented an atomistic approach for treating SiGe pMOSFET devices. A novel tight-binding bandstructure parametrization has been developed and validated for bulk SiGe. It has then been applied to ballistic simulation of quantum confined SiGe nanowire pMOS and compared to experimental result.
Keywords :
Ge-Si alloys; MOSFET; nanowires; SiGe pMOSFET device; atomistic simulation; ballistic simulation; bulk SiGe; quantum confined SiGe nanowire pMOS; tight-binding bandstructure parametrization; Capacitive sensors; Computational modeling; Effective mass; Electron devices; Germanium silicon alloys; MOS devices; MOSFETs; Nanoscale devices; Potential well; Silicon germanium;
Conference_Titel :
Semiconductor Device Research Symposium, 2009. ISDRS '09. International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-6030-4
Electronic_ISBN :
978-1-4244-6031-1
DOI :
10.1109/ISDRS.2009.5378065
