DocumentCode :
3055202
Title :
Resistive switching characteristics of solution-processible TiOx using nano-scale via-hole structures
Author :
Jung, Seungjae ; Kim, Tae-Wook ; Choi, Hyejung ; Kong, Jaemin ; Park, Ju-Bong ; Jo, Minseok ; Kim, Seonghyun ; Lee, Wootae ; Lee, Joonmyoung ; Lee, Takhee ; Lee, Kwanghee ; Hwang, Hyunsang
Author_Institution :
Dept. of Mater. Sci. & Eng., Gwangju Inst. of Sci. & Technol. (GIST), Gwangju, South Korea
fYear :
2009
fDate :
9-11 Dec. 2009
Firstpage :
1
Lastpage :
2
Abstract :
In this study, we successfully demonstrated ReRAM device with active area below 1 ¿m2, using solution-processed TiO¿ in via-hole structures.
Keywords :
random-access storage; titanium compounds; TiO; nano-scale via-hole structures; resistive switching characteristics; Degradation; Educational institutions; Electronic equipment testing; Inorganic materials; Materials science and technology; Nanoscale devices; Nanostructured materials; Nanostructures; Nonvolatile memory; Temperature measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Device Research Symposium, 2009. ISDRS '09. International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-6030-4
Electronic_ISBN :
978-1-4244-6031-1
Type :
conf
DOI :
10.1109/ISDRS.2009.5378068
Filename :
5378068
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3055202
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