• DocumentCode
    3055202
  • Title

    Resistive switching characteristics of solution-processible TiOx using nano-scale via-hole structures

  • Author

    Jung, Seungjae ; Kim, Tae-Wook ; Choi, Hyejung ; Kong, Jaemin ; Park, Ju-Bong ; Jo, Minseok ; Kim, Seonghyun ; Lee, Wootae ; Lee, Joonmyoung ; Lee, Takhee ; Lee, Kwanghee ; Hwang, Hyunsang

  • Author_Institution
    Dept. of Mater. Sci. & Eng., Gwangju Inst. of Sci. & Technol. (GIST), Gwangju, South Korea
  • fYear
    2009
  • fDate
    9-11 Dec. 2009
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    In this study, we successfully demonstrated ReRAM device with active area below 1 ¿m2, using solution-processed TiO¿ in via-hole structures.
  • Keywords
    random-access storage; titanium compounds; TiO; nano-scale via-hole structures; resistive switching characteristics; Degradation; Educational institutions; Electronic equipment testing; Inorganic materials; Materials science and technology; Nanoscale devices; Nanostructured materials; Nanostructures; Nonvolatile memory; Temperature measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Device Research Symposium, 2009. ISDRS '09. International
  • Conference_Location
    College Park, MD
  • Print_ISBN
    978-1-4244-6030-4
  • Electronic_ISBN
    978-1-4244-6031-1
  • Type

    conf

  • DOI
    10.1109/ISDRS.2009.5378068
  • Filename
    5378068
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3055202