Fabrication and characterization of buried-gate fin and recess channel MOSFET for high performance and low GIDL current

Author

Song, Jae Young ; Kim, Jong Pil ; Kim, Sang Wan ; Oh, Jeong-Hoon ; Ryoo, Kyung-Chang ; Sun, Min-Chul ; Kim, Garam ; Kim, Hyun Woo ; Chang, Jisoo ; Jung, Sunghun ; Shin, Hyungcheol ; Park, Byung-Gook

Author_Institution

Sch. of Electr. Eng., Seoul Nat. Univ., Seoul, South Korea

fYear

2009

fDate

9-11 Dec. 2009

Firstpage

1

Lastpage

2

Abstract

In this paper, we introduce a buried-gate fin and recess channel MOSFET (BG-FiReFET) for a high performance and low power application. The source/drain region in the BG-FiReFET becomes wider than that of the conventional FinFETs without the epi-process. It can alleviate the burden of the high parasitic resistance. We have adopted a buried-gate structure to avoid GIDL current, which has non-overlapped gate-to-source/drain region.

Keywords

MOSFET; leakage currents; low-power electronics; buried-gate fin MOSFET; gate induced drain leakage; parasitic resistance; recess channel MOSFET; source-drain region; Educational institutions; Electron devices; Fabrication; FinFETs; MOSFET circuits; Region 2; Scanning electron microscopy; Silicon; Sun; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2009. ISDRS '09. International

Conference_Location

College Park, MD

Print_ISBN

978-1-4244-6030-4

Electronic_ISBN

978-1-4244-6031-1

Type

conf

DOI

10.1109/ISDRS.2009.5378069

Filename

5378069