Title :
MBE-grown buffer with high breakdown voltage for nitride HEMTs on GaN template
Author :
Cao, Yu ; Zimmermann, Tom ; Xing, Huili ; Jena, Debdeep
Author_Institution :
Electr. Eng. Dept., Univ. of Notre Dame, Notre Dame, IN, USA
Abstract :
The paper presents a molecular beam epitaxial (MBE) grown buffer for nitride HEMT. The samples were grown at the same thermocouple temperature of 660°C. GaN buffer layer was directly grown on the GaN template. In the secondary ion mass spectrometry (SIMS) measurements, unexpected silicon and oxygen impurity atoms at the template surface that caused the buffer leakage were identified.
Keywords :
III-V semiconductors; electric breakdown; gallium compounds; high electron mobility transistors; leakage currents; molecular beam epitaxial growth; semiconductor technology; wide band gap semiconductors; GaN; HEMT; MBE; buffer leakage; impurity atoms; molecular beam epitaxial growth; secondary ion mass spectrometry; temperature 660 degC; Atomic measurements; Buffer layers; Gallium nitride; HEMTs; Impurities; MODFETs; Mass spectroscopy; Molecular beam epitaxial growth; Silicon; Temperature;
Conference_Titel :
Semiconductor Device Research Symposium, 2009. ISDRS '09. International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-6030-4
Electronic_ISBN :
978-1-4244-6031-1
DOI :
10.1109/ISDRS.2009.5378074
