DocumentCode
3055324
Title
MBE-grown buffer with high breakdown voltage for nitride HEMTs on GaN template
Author
Cao, Yu ; Zimmermann, Tom ; Xing, Huili ; Jena, Debdeep
Author_Institution
Electr. Eng. Dept., Univ. of Notre Dame, Notre Dame, IN, USA
fYear
2009
fDate
9-11 Dec. 2009
Firstpage
1
Lastpage
2
Abstract
The paper presents a molecular beam epitaxial (MBE) grown buffer for nitride HEMT. The samples were grown at the same thermocouple temperature of 660°C. GaN buffer layer was directly grown on the GaN template. In the secondary ion mass spectrometry (SIMS) measurements, unexpected silicon and oxygen impurity atoms at the template surface that caused the buffer leakage were identified.
Keywords
III-V semiconductors; electric breakdown; gallium compounds; high electron mobility transistors; leakage currents; molecular beam epitaxial growth; semiconductor technology; wide band gap semiconductors; GaN; HEMT; MBE; buffer leakage; impurity atoms; molecular beam epitaxial growth; secondary ion mass spectrometry; temperature 660 degC; Atomic measurements; Buffer layers; Gallium nitride; HEMTs; Impurities; MODFETs; Mass spectroscopy; Molecular beam epitaxial growth; Silicon; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Device Research Symposium, 2009. ISDRS '09. International
Conference_Location
College Park, MD
Print_ISBN
978-1-4244-6030-4
Electronic_ISBN
978-1-4244-6031-1
Type
conf
DOI
10.1109/ISDRS.2009.5378074
Filename
5378074
Link To Document