Title :
Gain in silicon lasers based on shallow donor transitions
Author :
Zhukavin, R.Kh. ; Pavlov, S.G. ; Hovenier, J.N. ; Klaassen, T.O. ; Hubers, Heinz-Wilhelm ; van der Meer, A.F.G. ; Shastin, V.N.
Author_Institution :
Inst. of Phys. of Microstruct., Acad. of Sci., Nizhny Novgorod, Russia
fDate :
27 Sept.-1 Oct. 2004
Abstract :
The results of gain measurements for THz silicon lasers based on shallow donor intracenter optical transitions are presented. The experiments were performed under optical excitation of neutral donor centers by free electron (FELIX) and TEA carbon dioxide laser radiation using oscillator-amplifier scheme. Experimental data are compared with the theoretical estimates.
Keywords :
electron radiation; elemental semiconductors; excited states; free electron lasers; gain measurement; gas lasers; impurity states; laser transitions; optical pumping; semiconductor lasers; silicon; submillimetre wave lasers; Si; TEA carbon dioxide laser radiation; THz silicon lasers; free electron laser radiation; gain measurement; neutral donor centers; optical excitation; oscillator-amplifier scheme; shallow donor intracenter optical transitions; Free electron lasers; Gain measurement; Laser excitation; Laser theory; Laser transitions; Optical filters; Optical pumping; Pump lasers; Silicon; Stimulated emission;
Conference_Titel :
Infrared and Millimeter Waves, 2004 and 12th International Conference on Terahertz Electronics, 2004. Conference Digest of the 2004 Joint 29th International Conference on
Print_ISBN :
0-7803-8490-3
DOI :
10.1109/ICIMW.2004.1422077
