Title :
ZnxCd1−xSe/ ZnyCd1−ySe quantum dot floating gate nonvolatile memory
Author :
Al-Amoody, F. ; Suarez, E. ; Rodriguez, A. ; Heller, E. ; Ayers, J. ; Jain, F.
Author_Institution :
Electr. & Comput. Eng. Dept., Univ. of Connecticut, Storrs, CT, USA
Abstract :
This paper presents a floating quantum dot gate nonvolatile memory device using high energy gap ZriyCdi.ySe cladded Zn¿Cdi.¿Se quantum dots (y>x) with tunneling layers comprised of nearly lattice-matched semiconductors (e.g. ZnS/ZnMgS). The quantum dots were grown on ptype silicon between the source and drain regions. The quantum dots were nucleated in a photoassisted microwave plasma (PMP) metalorganic chemical vapor deposition reactor.
Keywords :
MOCVD; random-access storage; semiconductor quantum dots; zinc compounds; ZnCdSe; high energy gap; lattice-matched semiconductors; photoassisted microwave plasma metalorganic chemical vapor deposition reactor; quantum dot floating gate nonvolatile memory; Microwave devices; Nonvolatile memory; Plasma chemistry; Plasma devices; Plasma sources; Portable media players; Quantum dots; Silicon; Tunneling; Zinc compounds;
Conference_Titel :
Semiconductor Device Research Symposium, 2009. ISDRS '09. International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-6030-4
Electronic_ISBN :
978-1-4244-6031-1
DOI :
10.1109/ISDRS.2009.5378076
