Title :
Role of fin thickness on ballistic transport in nanoscale FinFETs
Author :
Islam, Raisul ; Amin, Emran Md. ; Baten, Md Zunaid ; Khosru, Quazi D M
Author_Institution :
Dept. of Electr. & Electron. Eng., Bangladesh Univ. of Eng. & Technol., Dhaka, Bangladesh
Abstract :
Performance limit of tri-gate (TG) and double gate (DG) SOI FinFETs have been compared in terms of ballistic current which is calculated by using a modified model shown for conventional MOSFET. Such a simple model for calculating ballistic current in nanoscale multigate MOSFETs is yet to be reported. Comparison of the ballistic current for different Si fin thicknesses reveals that for decreasing fin thickness, strong quantum mechanical confinement degrades the ballistic current. The simulation result presented here contradicts with the previously reported result that TG FinFETs always show better performance than DG FinFETs and reveals that DG FinFETs show slightly better performance below 5nm fin thickness. This result indicates that in terms of ballistic drive current the tri-gate device is not always favorable than double gate device especially when the device dimension is scaled down deeply.
Keywords :
MOSFET; ballistic transport; silicon-on-insulator; ballistic transport; double gate SOI FinFET; fin thickness; nanoscale FinFET; quantum mechanical confinement; tri-gate SOI FinFET; Ballistic transport; Degradation; Educational institutions; FinFETs; MOSFET circuits; Paper technology; Potential well; Quantum mechanics; Silicon; Voltage;
Conference_Titel :
Semiconductor Device Research Symposium, 2009. ISDRS '09. International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-6030-4
Electronic_ISBN :
978-1-4244-6031-1
DOI :
10.1109/ISDRS.2009.5378078
