Title :
Surface-potential-based compact model of dynamically depleted SOI MOSFETs
Author :
Yao, W. ; Wu, W. ; Gildenblat, G.
Author_Institution :
Dept. of Electr. Eng., Arizona State Univ., Tempe, AZ, USA
Abstract :
PSP-based compact model of dynamically depleted SOI MOSFETs has been developed and verified using TCAD simulations. This development adopts the symmetric linearization method to the dynamically depleted SOI operation while retaining the highly developed description of the small geometry effects in the PSP models. The model has been implemented in circuit simulators, benchmarked and tested for convergence.
Keywords :
MOSFET; semiconductor device models; silicon-on-insulator; technology CAD (electronics); PSP models; TCAD simulations; circuit simulation; dynamically depleted SOI MOSFET; geometry effects; surface-potential-based compact model; symmetric linearization method; Capacitance; Educational institutions; Equations; Geometry; MOSFETs; Semiconductor films; Silicon; Solid modeling; Standards development; Thin film transistors;
Conference_Titel :
Semiconductor Device Research Symposium, 2009. ISDRS '09. International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-6030-4
Electronic_ISBN :
978-1-4244-6031-1
DOI :
10.1109/ISDRS.2009.5378081
