Investigation of strain relaxation in patterned strained silicon-on-insulator structures by Raman spectroscopy and computer simulation

Author

Gu, D. ; Naumann, F. ; Petzold, M. ; Zhu, M. ; Baumgart, H.

Author_Institution

Appl. Res. Center, Old Dominion Univ., Newport News, VA, USA

fYear

2009

fDate

9-11 Dec. 2009

Firstpage

1

Lastpage

2

Abstract

The authors study the simplest but scientifically relevant case, where in the absence of capping layers or any other precautions, strain relaxation by film patterning and high temperature annealing can be observed. The thermal stability of bi-axial strain is maintained solely by a nonepitaxial bonded interface with the amorphous buried oxide in sSOI after patterning and subsequent high temperature annealing.

Keywords

Raman spectroscopy; annealing; nanopatterning; relaxation; silicon-on-insulator; thermal stability; Raman spectroscopy; amorphous buried oxide; bi-axial strain; capping layers; computer simulation; film patterning; nonepitaxial bonded interface; patterned strained silicon-on-insulator structures; strain relaxation; temperature annealing; thermal stability; Amorphous materials; Annealing; Bonding; Capacitive sensors; Computer simulation; Raman scattering; Silicon on insulator technology; Spectroscopy; Temperature; Thermal stability;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2009. ISDRS '09. International

Conference_Location

College Park, MD

Print_ISBN

978-1-4244-6030-4

Electronic_ISBN

978-1-4244-6031-1

Type

conf

DOI

10.1109/ISDRS.2009.5378087

Filename

5378087