Title :
Frequency mixing characteristics of room-temperature triple-barrier resonant tunneling diodes in 100 GHz band
Author :
Hori, Toshihiro ; Ozono, Tetsuro ; Orihashi, Naoyuki ; Asada, Masahiro
Author_Institution :
Nat. Inst. of Inf. & Commun. Technol., Tokyo, Japan
fDate :
27 Sept.-1 Oct. 2004
Abstract :
Frequency mixing characteristics are examined for GaInAs/InAlAs triple-barrier resonant tunneling diodes operating at room temperature in 100 GHz band. To reduce the capacitance, the diameter is made as small as 0.8 μm. When the bias voltage is set in the negative differential conductance region, clear heterodyne signals can be obtained.
Keywords :
III-V semiconductors; aluminium compounds; capacitance; gallium arsenide; heterodyne detection; indium compounds; resonant tunnelling diodes; submillimetre wave diodes; submillimetre wave mixers; 0.8 micron; 100 GHz; 293 to 298 K; GaInAs-InAlAs; bias voltage; capacitance reduction; frequency mixing characteristics; heterodyne signals; negative differential conductance region; room temperature; triple barrier resonant tunneling diodes; Capacitance; Communications technology; Diodes; Frequency; Gold; Lithography; Oscillators; Resonant tunneling devices; Temperature; Voltage;
Conference_Titel :
Infrared and Millimeter Waves, 2004 and 12th International Conference on Terahertz Electronics, 2004. Conference Digest of the 2004 Joint 29th International Conference on
Print_ISBN :
0-7803-8490-3
DOI :
10.1109/ICIMW.2004.1422089
