• DocumentCode
    3055802
  • Title

    The variations of water level in reservoir influence on stability collapse deposit

  • Author

    Song, Laifu ; Wang, Changming ; Liu, He ; Lu, Changwei

  • Author_Institution
    Coll. of Constr. Eng., Jilin Univ., Changchun, China
  • fYear
    2011
  • fDate
    26-28 July 2011
  • Firstpage
    1860
  • Lastpage
    1864
  • Abstract
    The variations of water level in reservoir have significant to the stability of the reservoir slope. Analyzing the influence factors which fluctuation of water table for slope by the Finite Element Method and Limit Equilibrium Method. Analyzing the stress field, strain field and stability for Jiu-zi collapse deposit in different reservoir water level, and getting the results that the distribution characteristics stress and strain in different water level. Using FEM based on shear strength reduction methods and Limit Equilibrium Method, results show: (1) The numerical value of horizontal displacement and shear stress is the largest in the low water level, as the water level rises, the value become decrease. (2) As the water level rises, stability coefficient increases, therefore, it is less likely to cause deep slip. (3) The former have a larger numerical value than the latter with the FEM based on shear strength reduction methods and Limit Equilibrium Method.
  • Keywords
    finite element analysis; mechanical stability; reservoirs; shear strength; stress-strain relations; Jiu-zi collapse deposit; finite element method; horizontal displacement; limit equilibrium method; reservoir influence; reservoir slope; shear strength reduction methods; shear stress; stability collapse deposit; strain field; stress field; water level cariations; water table; Finite element methods; Numerical stability; Reservoirs; Rocks; Stability analysis; Stress; collapse deposit; stability; water level in reservoir;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Multimedia Technology (ICMT), 2011 International Conference on
  • Conference_Location
    Hangzhou
  • Print_ISBN
    978-1-61284-771-9
  • Type

    conf

  • DOI
    10.1109/ICMT.2011.6003344
  • Filename
    6003344