Title :
Operation of carbon nanotube thin-film transistors at elevated temperatures
Author :
Ozturk, S. ; Dogan, M. ; Aktas, O.
Author_Institution :
Electr. & Electron. Eng., Bilkent Univ., Ankara, Turkey
Abstract :
The authors study the operation of carbon nanotube thin-film transistors (CNT-TFT) at elevated temperatures. Due to the small bandgap of semiconducting carbon nanotubes, CNT-TFTs are not suitable to be developed as high-temperature devices. However, CNT-TFTs will still have to endure elevated temperatures when employed in large-area and flexible electronic applications. The temperature range that can be expected in these applications is well below 100°C. In this work, the authors demonstrate that even at 100°C, CNT-TFT devices are operational but with a reduced ON/OFF ratio. Beyond 100°C, the ON/OFF ratio degrades rapidly.
Keywords :
carbon nanotubes; thin film transistors; C; semiconducting carbon nanotubes; small bandgap; temperature devices; thin film transistors; Carbon nanotubes; Current-voltage characteristics; Educational institutions; Oxidation; Plasma measurements; Plasma temperature; Schottky barriers; Testing; Thin film transistors; Voltage;
Conference_Titel :
Semiconductor Device Research Symposium, 2009. ISDRS '09. International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-6030-4
Electronic_ISBN :
978-1-4244-6031-1
DOI :
10.1109/ISDRS.2009.5378102