Title :
Influence of miniband electron elastic scattering on Bloch gain in semiconductor superlattices
Author_Institution :
Dept. of Radiophys., Nizhny Novgorod State Univ., Russia
fDate :
27 Sept.-1 Oct. 2004
Abstract :
Applying a three-dimensional Monte Carlo technique we simulated the motion of electrons subject to static and terahertz (THz) fields in semiconductor superlattices of different miniband widths at 4 K. We assumed electrons to be scattered at polar optic and acoustic phonons, and ionized impurities. We found that impurity scattering of electrons in the superlattice with the miniband width smaller than the optic phonon energy extends significantly a frequency range with a strong Bloch gain.
Keywords :
Brillouin zones; III-V semiconductors; Monte Carlo methods; aluminium compounds; electron-phonon interactions; gallium arsenide; impurity distribution; impurity scattering; impurity states; semiconductor quantum wells; semiconductor superlattices; 4 K; Bloch gain; Brillouin zones; GaAs-AlAs; electron motion; electron scattering; impurity scattering; impurity states; ionized impurities; miniband electron elastic scattering; miniband width; polar acoustic phonons; polar optical phonon energy; semiconductor quantum wells; semiconductor superlattices; static field; terahertz field; three dimensional Monte Carlo technique; Acoustic scattering; Electron optics; Frequency; Impurities; Monte Carlo methods; Optical scattering; Optical superlattices; Particle scattering; Phonons; Semiconductor superlattices;
Conference_Titel :
Infrared and Millimeter Waves, 2004 and 12th International Conference on Terahertz Electronics, 2004. Conference Digest of the 2004 Joint 29th International Conference on
Print_ISBN :
0-7803-8490-3
DOI :
10.1109/ICIMW.2004.1422096