Title :
High temperature characteristics of ZnO-based MOS-FETs with photochemical vapor deposition SiO2 gate oxide
Author :
Young, S.J. ; Chang, S.J. ; Ji, L.W. ; Hung, H. ; Wang, S.M. ; Liu, K.W. ; Chen, K.J. ; Hu, Z.S.
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
Abstract :
ZnO-based MOSFETs were fabricated in this study. The I-V curve of the source-drain ohmic contacts show. We can get the good ohmic performance by using the Ti/Al/Ti/Au metals and annealing at 525 ¿C, 3 minutes. Then, we deposited the SiO2 layer by using photo-CVD system and the schematic diagram of photo-CVD system shows in figure 2.
Keywords :
MOSFET; aluminium; annealing; gold; ohmic contacts; silicon compounds; titanium; zinc compounds; I-V curve; MOSFET; ZnO; annealing; gate oxide; high temperature characteristics; photochemical vapor deposition; source-drain ohmic contacts; Chemical vapor deposition; Educational institutions; FETs; Leakage current; MOSFETs; Materials science and technology; Paper technology; Photochemistry; Temperature; Voltage;
Conference_Titel :
Semiconductor Device Research Symposium, 2009. ISDRS '09. International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-6030-4
Electronic_ISBN :
978-1-4244-6031-1
DOI :
10.1109/ISDRS.2009.5378103
